基于扩展规格书数据的SiC功率MOSFET建模

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Abstract In this paper, a practical SiC power MOSFET modeling method is presented. The models established by the method can be implemented in graphical simulation software for power electronic circuit loss analysis. Firstly, the static model is established based on device datasheet values. Then, the dynamic parts of the model are established based on the expanded datasheet values, according to the analysis of physical structure and characteristics of SiC power MOSFET, and therefore the complete model is established. Finally, models of various commercial SiC power MOSFET devices are established and validated by simulation and experiment. It is demonstrated that the proposed model has gratifying accuracy and generality. The source data used for the modeling method comes only from the product datasheet, and there is no need to acquire other data beyond the datasheet through measurement.

Key words： SiC power MOSFET modeling reverse recovery lumped charge model double pulse test switching loss

Received: 24 April 2023

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	WANG Kerou
	WU Zhongqiang

Cite this article:

WANG Kerou,WU Zhongqiang. Modeling of SiC power MOSFET based on expanded datasheet values[J]. Electrical Engineering, 2023, 24(7): 47-55.

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http://dqjs.cesmedia.cn/EN/Y2023/V24/I7/47

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