Temperature distribution and conduction characteristics of metal oxide varistor in the thermal stability experiments
XIAO Xing1, WANG Jianzhong2
1. Beijing Leishan Testing Service Center of Lightning Protection Facilities, Beijing 102200; 2. Aerospace Leishan (Beijing) Institute of Metrology Technology, Beijing 102200
Abstract：With the increasing performance requirements of electronic devices, metal oxide varistor (MOV) chips, as important electrical protection components, are widely used in areas such as surge protection. The temperature distribution and conduction characteristics of MOV during operation affect its performance and reliability. This paper experimentally studies the temperature distribution of MOV chips in thermal stability tests and analyzes the impact of temperature non-uniformity on chip performance. The research results show that during the experiment, the highest temperatures of chips with and without a shell are similar and located in the central area. After stabilization, the highest temperature of the shell is 56.5℃ lower than that of the chip on average, and the temperature difference ratio between the inside and outside of the shell remains at around 38% at various current levels. Temperature non- uniformity may lead to local overheating, thereby accelerating chip aging and failure. The research results confirm that the high temperature of MOV often occurs at the electrode pad holes, providing a design basis for its thermal stability test performance and overall thermal separation structure in practical use.
肖行, 王建忠. 金属氧化物压敏电阻热稳定实验中温度分布与传导特性[J]. 电气技术, 2026, 27(3): 48-51.
XIAO Xing, WANG Jianzhong. Temperature distribution and conduction characteristics of metal oxide varistor in the thermal stability experiments. Electrical Engineering, 2026, 27(3): 48-51.
2026, Vol. 27 
